TM Silicon Strain Gauge Pressure Transducer

Passive compensated pressure transducer with a four arm semiconductor Wheatstone bridge circuit which produces a 100 millivolt with a 10 volt excitation. Pressure ranges from 0-100mbar up to 0-1000bar gauge or absolute. The silicon sensing chip is totally isolated from the media by an oil filled stainless steel 316L capsule with isolation membrane. This sensor is ideally suited for high frequency response applications since the output is only limited by the natural response of the silicon sensing capsule.

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Product Parameters

Pressure Range: 0-100mb upto 0-1000bar gauge or absolute

Output Signal: 0-100mV > 2.5bar, 50mV > 1bar, 35mV >0.6bar, 25mV >0.25bar and 15mV <= 0.25bar, with 10Vdc supply

Accuracy: 0.5% FS BSL <= 600bar, 1% > 600bar, optional 0.25% for some ranges

Response Time: < 1msec, 10-90% FS

Operating Temperature Range:  -25 to +150 degC

Electrical Connections: DIN, Binder or MIL C26482 connectors.  Cable gland with PE, PUR or Teflon cable

Pressuure Connections: BSP, DIN3852, DIN16288, flush and frontal diaphragm, NPT

Media Compatibility: Stainless steel 316L or Hastelloy C276 diaphragm and pressure fitting.  Viton, EPDM or Kalrez internal gasket seal

Dimensions: 24mm dia

Special Features: High dynamic response, low power consumption, high media temperature

Special Options: Hastelloy C276 wetted parts, ATEX intrinsic safety

Product Description

The TM strain silicon gauge pressure transducer has an all stainless steel 316L construction making it suitable for a wide range of media types.  The silicon chip has implanted semiconductor strain gauges which offer a high mV/V sensitivity which improves signal/noise ratio and provides one of the highest possible outputs from a passive strain gauge pressure sensor.

Primarily suited to research and test applications which require high frequency response to analyse process characteristics and low power consumption for battery powered data logging in remote locations.  Due to the lack of active electronics and signal conditioning circuitry the TM strain silicon gauge pressure transducer also has a relatively high operating temperature range of 150 degC (302 degF).

The output signal is produced by causing an imbalance of impedance in the 4 arm wheatstone bridge circuit of silicon strain gauges when pressure is applied.  The output is thus proportional to the excitation voltage applied across the bridge.  A nominal regulated 10Vdc supply voltage will generate a sensitivity of 10mV/V for all standard ranges above 2.5 bar.  Since the output is ratiometric to supply voltage, the sensor must be connected to a regulated supply if measuring the output signal independently of supply.

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